Electrical characteristics of TiN contacts to N silicon
- 1 September 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5722-5726
- https://doi.org/10.1063/1.329512
Abstract
We have performed a detailed investigation of TiN contacts on n‐type silicon. The barrier height was found to be 0.49±0.01 V and the contact resistivity on 0.001‐Ω cm substrates below 10−4 Ω cm2. The TiN layers were produced by reactive sputtering. The resistivity of the layers depends on the partial pressure of N2 in the N2+Ar sputtering gas mixture. A minimum of 55 μΩ cm was obtained, which is below the resistivity of pure Ti films. Finally, we have developed two etching solutions which allow patterning of TiN layers using conventional photolithography techniques.This publication has 10 references indexed in Scilit:
- High-temperature contact structures for silicon semiconductor devicesApplied Physics Letters, 1980
- Specific contact resistance using a circular transmission line modelSolid-State Electronics, 1980
- Investigation of titanium—nitride layers for solar-cell contactsIEEE Transactions on Electron Devices, 1980
- TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devicesApplied Physics Letters, 1980
- Diffusion barriers in thin filmsThin Solid Films, 1978
- Chemical Bonding and Structure of Metal-Semiconductor InterfacesPhysical Review Letters, 1975
- Models for contacts to planar devicesSolid-State Electronics, 1972
- Contact Resistance and Contact ResistivityJournal of the Electrochemical Society, 1972
- Some Properties of Ohmic Metal-Semiconductor ContactsJournal of Applied Physics, 1963
- Structure and Electrical Properties of Evaporated and Sputtered Titanium FilmsAnnalen der Physik, 1963