Infrared optical absorption of thin PtSi films between 1 and 6 μm
- 1 November 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (9) , 4664-4667
- https://doi.org/10.1063/1.341248
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Silicide Infrared Staring SensorsPublished by SPIE-Intl Soc Optical Eng ,1988
- 256 X 256 Element Platinum Silicide Schottky-Barrier Infrared Charge-Coupled Device Image SensorOptical Engineering, 1987
- Infrared absorption in PtSi-Si interface statesApplied Physics Letters, 1986
- 160 × 244 Element PtSi Schottky-barrier IR-CCD image sensorIEEE Transactions on Electron Devices, 1985
- The theory of hot-electron photoemission in Schottky-barrier IR detectorsIEEE Transactions on Electron Devices, 1985
- Infrared optical constants of PtSiApplied Physics Letters, 1983
- Crystallography of PtSi films on (001) siliconJournal of Applied Physics, 1978
- Infrared Refractive Indexes of Silicon Germanium and Modified Selenium Glass*Journal of the Optical Society of America, 1957