Structural characterization of Hg0.78Cd0.22Te/CdTe LPE heterostructures grown from Te solutions
- 31 August 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 113 (1-2) , 53-60
- https://doi.org/10.1016/0022-0248(91)90008-s
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Transmission electron microscopy of LPE grown CdHgTeJournal of Crystal Growth, 1989
- Dislocations in Hg1−xCdxTe/Cd1−zZnzTe epilayers grown by liquid-phase epitaxyJournal of Applied Physics, 1988
- Slider LPE growth of MCT using in situ Te-solution preparationJournal of Crystal Growth, 1988
- Misfit and threading dislocations in HgCdTe epitaxyJournal of Vacuum Science & Technology A, 1986
- Hg1−xCdxTe-Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applicationsJournal of Applied Physics, 1985
- Overview of microstructural defect development in interfacial regions of HgCdTe and CdTe layers grown on CdTe and alternate substratesJournal of Vacuum Science & Technology A, 1985
- Blocking of threading dislocations by Hg1−xCdxTe expitaxial layersApplied Physics Letters, 1984
- Comparative studies of mercury cadmium telluride single crystal and epitaxialJournal of Vacuum Science & Technology A, 1983
- Slider LPE of Hg1-xCdxTe using mercury pressure controlled growth solutionsJournal of Electronic Materials, 1981
- Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te systemJournal of Electronic Materials, 1980