Transmission electron microscopy of LPE grown CdHgTe
- 1 June 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (2) , 348-356
- https://doi.org/10.1016/0022-0248(89)90532-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Dislocation energies and hardness of semiconductorsApplied Physics Letters, 1985
- Formation and elimination of surface ion milling defects in cadmium telluride, zinc sulphide and zinc selenideUltramicroscopy, 1985
- The introduction of misfit dislocations in HgCdTe epitaxial layersPhysica Status Solidi (a), 1983
- Cross-sectional specimens for transmission electron microscopyJournal of Applied Physics, 1974