Ion beam deposition and oxidation of spin-dependent tunnel junctions
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 35 (5) , 2952-2954
- https://doi.org/10.1109/20.801044
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- High density submicron magnetoresistive random access memory (invited)Journal of Applied Physics, 1999
- Temperature dependence and annealing effects on spin dependent tunnel junctionsJournal of Applied Physics, 1999
- Low resistance spin-dependent tunnel junctions deposited with a vacuum break and radio frequency plasma oxidizedApplied Physics Letters, 1999
- Ion beam deposition of Mn-Ir spin valvesIEEE Transactions on Magnetics, 1999
- Large tunneling magnetoresistance enhancement by thermal annealApplied Physics Letters, 1998