Imperfections in and ion diffusion through oxide layers on silicon
- 31 October 1980
- journal article
- Published by Elsevier in Applications of Surface Science
- Vol. 6 (2) , 138-148
- https://doi.org/10.1016/0378-5963(80)90140-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The silicon/silica electrodePhysica Status Solidi (a), 1980
- The defect structure of vitreous SiO2 films on silicon. II. Channel and network defects in vitreous SiO2Physica Status Solidi (a), 1980
- Schottky barrier height and reverse current of the n-Si-electrolyte junctionSurface Science, 1979
- Electron Exchange at the Surface of Thermally Grown SilicaJournal of the Electrochemical Society, 1979
- Injection and removal of ionic charge at room temperature through the interface of air with SiO2Journal of Applied Physics, 1973
- Noncrystalline Structure and Electronic Conduction of Silicon Dioxide FilmsPhysica Status Solidi (b), 1967