High-Power 25-Gb/s Electroabsorption Modulator Integrated With a Laser Diode
- 24 February 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 21 (10) , 633-635
- https://doi.org/10.1109/lpt.2009.2015581
Abstract
A high-power 1.3-mu m electroabsorption modulator integrated laser diode was developed for 100 - Gb/s Ethernet applications. The average output power exceeding 6.5 dBm and clear eye opening with dynamic extinction ratio over 7.6 dB were realized at 35 degC.Keywords
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