Photo-Hall effect of CdS : Li single crystals

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Abstract
The photo‐Hall effect in lithium‐doped CdS single crystals has been studied. Samples were prepared by a sublimation recrystallization method. The carrier concentration n was proportional to the excitation intensity, and the Hall mobility obtained was a constant value of about 200 cm2/V sec, at room temperature over the whole excitation region of 100–105 lx. The temperature dependence of the photo‐Hall effect was also measured. The results showed unmeasureably low values of the Hall mobility in the temperature region 350–400 K. However, with increasing temperature the Hall mobility and carrier concentration increase again, but the sign of the Hall effect indicates electrons. The p‐type CdS has not been obtained, even with an addition of 0.01 wt% of lithium impurity.

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