Chemical trends in ground- and excited-state properties of interstitial3dimpurities in silicon
- 15 June 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (12) , 8317-8320
- https://doi.org/10.1103/physrevb.31.8317
Abstract
A spin-polarized local-density Green’s-function calculation for tetrahedral interstitial 3d impurities in silicon reveals a new energy-level scheme that explains the observed chemical trends both in ground-state properties (hyperfine coupling constants and g values) and in excited-state properties (donor and acceptor ionization energies).Keywords
This publication has 10 references indexed in Scilit:
- Calculation of the spin-polarized electronic structure of an interstitial iron impurity in siliconPhysical Review B, 1985
- Electronic structure of transition-atom impurities in GaPPhysical Review B, 1985
- Localization and Magnetism of an Interstitial Iron Impurity in SiliconPhysical Review Letters, 1984
- Applicability of the local-density theory to interstitial transition-metal impurities in siliconPhysical Review B, 1983
- Transition metals in siliconApplied Physics A, 1983
- Level positions of interstitial transition-metal impurities in siliconPhysical Review B, 1982
- Point Defects in GaP, GaAs, and InPPublished by Elsevier ,1982
- Self-interaction correction to density-functional approximations for many-electron systemsPhysical Review B, 1981
- Dynamical Jahn-Teller Effect in Paramagnetic Resonance Spectra: Orbital Reduction Factors and Partial Quenching of Spin-Orbit InteractionPhysical Review B, 1965
- Spin Resonance of Transition Metals in SiliconPhysical Review B, 1960