Modeling semiconductor amplifiers and lasers: from microscopic physics to device simulation

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Abstract
We combine the results of full many-body band-structure calculations of the semiconductor optical response and a full space–time-resolved laser propagation model. Two quantum-well structures are chosen, one showing a sharp increase of the linewidth enhancement factor with density; the other, a clamping of this factor with increasing density. The average far-field broadening of two weakly turbulent broad-area high-power semiconductor lasers is shown to be quite different for the two structures.