Observation of change in shape of oxygen precipitates in high-temperature annealed silicon by transmission electron microscopy
- 18 March 1999
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (12) , 1675-1676
- https://doi.org/10.1063/1.123651
Abstract
Changes in size and shape of oxygen precipitates in Czochralski silicon after high-temperature annealing in an Ar atmosphere were observed using a transmission electron microscopy. The oxide precipitates introduced by 750 °C after 4 h annealing in an Ar atmosphere had their corners rounded off by thermal annealing at 1200 °C, and disappeared by 1300 °C although we observed no change in shape at 1050 °C.Keywords
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