Transmission Electron Microscope Observation of “IR Scattering Defects” in As-Grown Czochralski Si Crystals
- 1 November 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (11R) , 5597
- https://doi.org/10.1143/jjap.35.5597
Abstract
Grown-in defects detected by IR laser scattering tomography (LSTDs) in Czochralski-grown Si crystals were identified for the first time by transmission electron microscopy (TEM) with a special defect positioning technique. The basic structure of each LSTD was revealed to be a composite of two or three incomplete octahedral voids with a total size of 100–300 nm. The TEM images of the defects suggest the existence of walls several nanometers thick surrounding the voids. A weak oxygen signal was detected from the defect by energy dispersive X-ray spectrometry. The thin walls surrounding the voids were considered to be made of SiOx.Keywords
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