Axial Microscopic Distribution of Grown-in Defects in Czochralski-Grown Silicon Crystals
- 1 May 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (5B) , L699
- https://doi.org/10.1143/jjap.32.l699
Abstract
The axial microscopic distribution of grown-in defects in Czochralski silicon was studied by means of IR light scattering tomography (LST) and preferential etching. IR scattering defects (defects observed with LST) were found to degrade the gate oxide integrity yield, and the axial density distribution of IR scattering defects and flow patterns (wedge-shaped etch patterns) fluctuated with oxygen concentration fluctuations along the growth axis. However, the defect density did not depend directly on oxygen concentration. It is considered that the formation of IR scattering defects is related to the solid-liquid intertace temperature fluctuations.Keywords
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