Dual-beam photocurrent spectra in undoped a-Si:H: anomalous band, optical transition energy, and correlation energy

This publication has 7 references indexed in Scilit:

• Observation of a novel relaxation process associated with electronic transitions from deep (D) defects in hydrogenated amorphous silicon
  Physical Review Letters, 1992
• Modulated electron-spin-resonance measurements and defect correlation energies in amorphous silicon
  Physical Review Letters, 1992
• Experimental evidence for zero-correlation-energy deep defects in intrinsic hydrogenated amorphous silicon
  Physical Review Letters, 1990
• Internal photoemission of holes and the mobility gap of hydrogenated amorphous silicon
  Physical Review Letters, 1989
• Hole trapping, light soaking, and secondary photocurrent transients in amorphous silicon
  Physical Review B, 1989
• Photomodulation spectroscopy of dangling bonds in doped and undoped a-Si:H
  Solid State Communications, 1988
• Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds
  Physical Review Letters, 1985