Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering
Open Access
- 3 September 1999
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 285 (5433) , 1551-1553
- https://doi.org/10.1126/science.285.5433.1551
Abstract
A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.Keywords
This publication has 15 references indexed in Scilit:
- Scaling Laws of the Ripple Morphology on Cu(110)Physical Review Letters, 1998
- Self-Organized Growth of Three- Dimensional Quantum-Dot Crystals with fcc-Like Stacking and a Tunable Lattice ConstantScience, 1998
- Simulations of Ripple Formation on Ion-Bombarded Solid SurfacesPhysical Review Letters, 1997
- Roughening and ripple instabilities on ion-bombarded SiPhysical Review B, 1996
- Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructuresApplied Physics Letters, 1996
- Stochastic Model for Surface Erosion via Ion Sputtering: Dynamical Evolution from Ripple Morphology to Rough MorphologyPhysical Review Letters, 1995
- Dynamic Scaling of Ion-Sputtered SurfacesPhysical Review Letters, 1995
- The evolution of atomic scale topography by sputtering erosionSurface and Interface Analysis, 1993
- Growth and Erosion of Thin Solid FilmsScience, 1990
- Theory of ripple topography induced by ion bombardmentJournal of Vacuum Science & Technology A, 1988