Compensation effect of lattice constant in silicon n+-n- junctions by liquid phase epitaxy
- 31 July 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (3) , 584-588
- https://doi.org/10.1016/0022-0248(89)90055-9
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 13 references indexed in Scilit:
- Silicon-to-silicon direct bonding methodJournal of Applied Physics, 1986
- Anomalous Diffusion of Phosphorus into SiliconJapanese Journal of Applied Physics, 1970
- Stresses in Heteroepitaxial Layers: GaAs1−xPx on GaAsJournal of Applied Physics, 1969
- Effect of a GaAsxP1−x Transition Zone on the Perfection of GaP Crystals Grown by Deposition onto GaAs SubstratesJournal of Applied Physics, 1969
- Misfit Dislocations in Bicrystals of Epitaxially Grown Silicon on Boron-Doped Silicon SubstratesJournal of Applied Physics, 1969
- Plastic Deformation in Epitaxial Ge Layers Grown on Single Crystal Semi-Insulating GaAsJournal of the Electrochemical Society, 1968
- Accommodation of Lattice Mismatch at HeterojunctionsJournal of the Electrochemical Society, 1968
- Conditions for the Generation of Slip by Diffusion of Phosphorus into SiliconJournal of Applied Physics, 1966
- Diffusion-Induced Dislocations in SiliconJournal of Applied Physics, 1964
- Generation and Distribution of Dislocations by Solute DiffusionJournal of Applied Physics, 1961