2.2 V Operation power heterojunction FETfor personal digital cellular telephones

7 December 1995

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 31 (25) , 2213-2215
https://doi.org/10.1049/el:19951488

Abstract

The authors describe the 950 MHz power performance of a 2.2 V operation double-doped AlGaAs/lnGaAs/AlGaAs heterojunction FET(HJFET) for personal digital cellular telephones. The fabricated HJFET exhibited 600 mA/mm maximum drain current, 260 mS/mm transconductance and 9.4 V gate-to-drain breakdown voltage. A 21 mm gate-periphery device operating with a drain bias of 2.2 V, demonstrated 1.86 W (32.7 dBm) output power and 62.8% power-added efficiency with –50.5 dBc adjacent channel leakage power at 50 kHz off-centre frequency.

Keywords

This publication has 2 references indexed in Scilit:

Highly efficient double-doped heterojunction FET's for battery-operated portable power applications
IEEE Electron Device Letters, 1994
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