Hydrostatic Pressure Dependence of the Threshold Current in 1.5 μm Strained Quantum Well Lasers

This publication has 9 references indexed in Scilit:

• Optimization of long wavelength InGaAsP strained quantum-well lasers
  IEEE Journal of Quantum Electronics, 1995
• Analysis of gain in determining T/sub 0/ in 1.3 μm semiconductor lasers
  IEEE Journal of Selected Topics in Quantum Electronics, 1995
• Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers
  IEEE Journal of Quantum Electronics, 1994
• Temperature sensitivity and high temperature operation of long wavelength semiconductor lasers
  Applied Physics Letters, 1993
• Amplified spontaneous emission and carrier pinning in laser diodes
  IEEE Journal of Quantum Electronics, 1993
• Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum-well lasers
  Applied Physics Letters, 1993
• Effect of Auger recombination and differential gain on the temperature sensitivity of 1.5 μm quantum well lasers
  Applied Physics Letters, 1993
• Relations between theT 0 values of bulk and quantum-well GaAs
  Applied Physics B Laser and Optics, 1987
• Band-structure engineering for low-threshold high-efficiency semiconductor lasers
  Electronics Letters, 1986