Effect of electronic strain on photoacoustic generation in silicon
- 15 November 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (10) , 1048-1050
- https://doi.org/10.1063/1.96374
Abstract
The photogeneration of excess free carriers gives rise to a mechanical strain in semiconductors. An experiment has been performed to investigate the contribution of this electronic strain to photoacoustic generation, and it is found that electronic strain is an important mechanism in the photogeneration of acoustic waves in silicon. A theory is developed to predict the contribution of the electronic strain to the photoacoustic generation and is found to agree well with experiment.Keywords
This publication has 6 references indexed in Scilit:
- Acoustic wave generation by thermal excitation of small regionsApplied Physics Letters, 1985
- Photothermal displacement spectroscopy: An optical probe for solids and surfacesApplied Physics A, 1983
- Thermal-Wave ImagingScience, 1982
- Imaging of dopant regions in silicon with thermal-wave electron microscopyApplied Physics Letters, 1981
- Photoacoustics on a microscopic scaleApplied Physics Letters, 1978
- Photostriction Effect in GermaniumPhysica Status Solidi (b), 1961