Irradiation effects in high-purity InSb
- 1 January 1978
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 39 (2) , 71-80
- https://doi.org/10.1080/00337577808237906
Abstract
Galvanomagnetic and thermoelectric results are reported for high-purity InSb electron-irradiated at 10 K. Damage results have been studied for a fluence up to 2.7 × 1018 e/cm2 and the defect recovery has been investigated between 50 and 220 K. The effects of electrically active defects on the transport properties of InSb are discussed; these are apparently more complicated than has been believed previously; there is strong evidence for a semiconductor-to-metal transition at low temperatures and high defect concentrations.Keywords
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