Quantum dot origin of luminescence in InGaN-GaN structures
- 4 October 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 66 (15) , 155310
- https://doi.org/10.1103/physrevb.66.155310
Abstract
We report on resonant photoluminescence (PL) of InGaN inclusions in a GaN matrix. The structures were grown on sapphire substrates using metal-organic chemical vapor deposition. Nonresonant pulsed excitation results in a broad PL peak, while resonant excitation into the nonresonant PL intensity maximum results in an evolution of a sharp resonant PL peak, having a spectral shape defined by the excitation laser pulse and a radiative decay time close to that revealed for PL under nonresonant excitation. Observation of a resonantly excited narrow PL line gives clear proof of the quantum dot nature of luminescence in InGaN-GaN samples. PL decay demonstrates strongly nonexponential behavior evidencing coexistence of quantum dots having similar ground-state transition energy, but very different electron-hole wave-function overlap.Keywords
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