Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer
- 24 July 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (4) , 507-509
- https://doi.org/10.1063/1.127026
Abstract
We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5–3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen.Keywords
This publication has 13 references indexed in Scilit:
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting DiodesJapanese Journal of Applied Physics, 1999
- Transmission electron microscopy analysis of the shape and size of semiconductor quantum dotsPhilosophical Magazine Letters, 1999
- Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor depositionApplied Physics Letters, 1999
- Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling studyApplied Physics Letters, 1999
- Origin of Luminescence from InGaN DiodesPhysical Review Letters, 1999
- Direct observation of the core structures of threading dislocations in GaNApplied Physics Letters, 1998
- Phase separation in InGaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1998
- Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaNPhysical Review B, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Electron microscopy study of defects in synthetic diamond layersPhilosophical Magazine A, 1992