Reliability characteristics of mesa-etched isolated emitter structure AlGaAs/GaAs HBTs with Be-doped base
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 157-160
- https://doi.org/10.1109/gaas.1992.247201
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Reliability analysis of GaAs/AlGaAs HBTs under forward current/temperature stressPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- AlGaAs/GaAs HBT receiver ICs for a 10 Gbps optical communication systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistorsApplied Physics Letters, 1991
- High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contactsIEEE Electron Device Letters, 1991
- Recombination-enhanced impurity diffusion in Be-doped GaAsApplied Physics Letters, 1991
- Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxyJournal of Applied Physics, 1985