Nature of misfit dislocation sources in strained-layer semiconductor structures
- 1 August 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (5) , 394-396
- https://doi.org/10.1063/1.99889
Abstract
It is currently possible to grow nearly perfect strained-layer semiconductor heterostructures. Experimental evidence shows that misfit dislocation sources become active almost immediately as the layer thickness exceeds the equilibrium critical thickness. These dislocation sources do not seem related to obvious causes, such as threading dislocations or homogeneous nucleation at surface structures. It is argued here that the dislocation sources are inhomogeneous in nature and result from local stress concentrations near the surface.Keywords
This publication has 15 references indexed in Scilit:
- Erratum: Relaxation of strained-layer semiconductor structures via plastic flow [Appl. Phys. Lett. 5 1, 1325 (1987)]Applied Physics Letters, 1988
- Critical Stresses forStrained-Layer PlasticityPhysical Review Letters, 1987
- Atomistic study of structural metastability in coherently strained Si-like layersPhysical Review B, 1987
- Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x-ray diffractionApplied Physics Letters, 1987
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- A one-dimensional SiGe superlattice grown by UHV epitaxyApplied Physics A, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- Misfit Dislocations in the Bicrystal System of Silicon-Boron-Doped SiliconJournal of Vacuum Science and Technology, 1969
- Impurity clustering effects on dislocation generation in siliconDiscussions of the Faraday Society, 1964
- Stress concentrations at crystal surfaces and the embrittlement of sodium chloridePhilosophical Magazine, 1960