Switching properties of self-assembled ferroelectric memory cells
Open Access
- 16 August 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (8) , 1158-1160
- https://doi.org/10.1063/1.124628
Abstract
In this letter, we report on the switching properties of an ordered system of ferroelectric memory cells of an average lateral size of 0.18 μm formed via a self-assembling process. The ferroelectricity of these cells has been measured microscopically and it has been demonstrated that an individual cell of 0.18 μm size is switching. Switching of single nanoelectrode cells was achieved via scanning force microscopy working in piezoresponse mode.
Keywords
This publication has 10 references indexed in Scilit:
- Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applicationsApplied Physics Letters, 1998
- Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramicsReports on Progress in Physics, 1998
- The Physics of Ferroelectric MemoriesPhysics Today, 1998
- Scanning force microscopy: Application to nanoscale studies of ferroelectric domainsIntegrated Ferroelectrics, 1998
- Characterization of self-patterned SBT/SBNT thin films from photo-sensitive solutionsIntegrated Ferroelectrics, 1997
- A 60-ns 1-Mb nonvolatile ferroelectric memory with a nondriven cell plate line write/read schemeIEEE Journal of Solid-State Circuits, 1996
- Low-Voltage Switching Characteristics of SrBi2Ta2O9 CapacitorsJapanese Journal of Applied Physics, 1996
- Modification and detection of domains on ferroelectric PZT films by scanning force microscopySurface Science, 1994
- Raman spectroscopy of submicron KNO3 films. II. Fatigue and space-charge effectsJournal of Applied Physics, 1988
- Oxide ion conductors based on bismuthsesquioxideMaterials Research Bulletin, 1978