Raman spectroscopy of submicron KNO3 films. II. Fatigue and space-charge effects
- 1 August 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (3) , 1547-1551
- https://doi.org/10.1063/1.341831
Abstract
Raman spectroscopy of KNO3 thin-film ferroelectric memories has been performed as a function of film thickness, temperature, annealing procedures, and read-write cycles (fatigue). The results show that conversion to phase II is not the cause of failure in these memory devices, in agreement with the x-ray results of Schaffer and Mikkola. Waiting time effects are in accord with the space-charge theory of Takahashi.This publication has 19 references indexed in Scilit:
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