Switching kinetics in KNO3 ferroelectric thin-film memories
- 15 June 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (12) , 5467-5470
- https://doi.org/10.1063/1.338237
Abstract
The time dependence of the current transient i(t) produced by the reversal of domains in ferroelectric potassium nitrate thin-film memories of 75–300 nm is analyzed as a function of temperature and of thickness using the Avrami theory. For all the films the kinetics confirm the low-dimensional nature of the systemThis publication has 19 references indexed in Scilit:
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