Highly Bendable, Transparent Thin‐Film Transistors That Use Carbon‐Nanotube‐Based Conductors and Semiconductors with Elastomeric Dielectrics
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- 3 January 2006
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 18 (3) , 304-309
- https://doi.org/10.1002/adma.200501740
Abstract
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This publication has 48 references indexed in Scilit:
- Macroelectronics: Perspectives on Technology and ApplicationsProceedings of the IEEE, 2005
- Fully Transparent ZnO Thin‐Film Transistor Produced at Room TemperatureAdvanced Materials, 2005
- Flexible membrane pressure sensorSensors and Actuators A: Physical, 2004
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004
- A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applicationsProceedings of the National Academy of Sciences, 2004
- The path to ubiquitous and low-cost organic electronic appliances on plasticNature, 2004
- Transparent ElectronicsScience, 2003
- Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide SemiconductorScience, 2003
- ZnO-based transparent thin-film transistorsApplied Physics Letters, 2003
- Invisible circuitsNature, 1997