High-purity ZnSe obtained by metalorganic chemical vapor deposition epitaxy

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Abstract
High-quality homoepitaxial layers of ZnSe have been obtained by the metalorganic method. Optical measurements demonstrate the good purity of these samples. Resonant electronic Raman-scattering experiments have allowed the identification of some residual donors and shown that most of them originate in the substrate. A shallow donor, with an ionization energy of about 30.4 meV, not yet mentioned in the literature, has been observed and is believed to be iodine. Excitation Spectroscopy and Selective Pair Luminescence techniques have shown the existence of a new shallow acceptor associated to a donor-acceptor pair transitions band peaking at 2.75 eV, the ionization energy of which would be about 56 meV. The resonant electronic Raman-scattering technique, used here for the first time to investigate donors, appears much more sensitive than classical luminescence to characterize the semiconductor materials.