Effect of ionized donors on the electron and hole densities of states in silicon
- 1 March 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (3) , 1369-1374
- https://doi.org/10.1063/1.332159
Abstract
A self-consistent second Born aproxiamtion has been used to calculate the change in the electron and hole densities of states due to ionized donors in silicon. The results are compared with a previous partial-wave technique and found to be in good agreement for a case of common applicability, i.e., a donor density of 1020 cm−3 at room temperature.This publication has 13 references indexed in Scilit:
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