Carrier-Concentration-Dependent Phase Transition in SnTe

The transition temperature $T_c$ of the displacive phase transition in SnTe as a function of the carrier concentration $p^{*}$ is determined by measurements of the resistance anomaly. The transition temperature $T_c$ decreases gradually with increasing $p^{*}$ and vanishes at $p^{*}\sim 1.3\times {10}^{21}$ ${\mathrm{cm}}^{-3\mathrm{}}$. The results are explained by the electron-TO-phonon interaction model with an optical-deformation-potential constant of 10 eV.