Chemical vapor deposition-formed p-type ZnO thin films
- 1 July 2003
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 21 (4) , 1342-1346
- https://doi.org/10.1116/1.1584036
Abstract
We have fabricated nitrogen-doped zinc oxide (ZnO) films that demonstrate p-type behavior by using metalorganic chemical vapor deposition. In our experiment, diethylzinc is used as a Zn precursor, and NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. With these precursors, we have routinely reached an N concentration in the ZnO films of about 1–3 at. %. When the N concentration level is higher than 2 at. %, the films demonstrate p-type characteristics. The carrier concentration of the films varies from 1.0×10 15 to 1.0×10 18 cm −3 , and mobilities are mainly in the 10 −1 cm 2 V −1 s −1 range. The lowest film resistivity achieved is ∼20 Ω cm.Keywords
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