Depth distributions of silver ions implanted in Si and SiO2
- 1 January 1975
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 25 (2) , 91-96
- https://doi.org/10.1080/00337577508234733
Abstract
In-depth profiles of 20–140 keV 107 Ag ions implanted in Si and : iO2 were measured by elastic backscattering of 1 MeV α-particles. The results were compared with the theory of Brice. For silicon the experimental values of projected ranges and range stragglings are in good agreement with the predictions of the theory. For SiO2 the experimental values are systematically greater than the theoretical by a factor of about 1.4. For the conversion from the energy to the depth scale a method was : roposed in which a knowledge of the stopping power of α-particles is not needed. The influence of the scattering geometry on the depth resolution has also been discussed.Keywords
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