Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors
- 1 January 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 74 (1) , 172-180
- https://doi.org/10.1016/0022-0248(86)90261-7
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 24 references indexed in Scilit:
- Thermodynamic Calculation of the VPE Growth of In1-xGaxAsyP1-y by the Trichloride MethodJapanese Journal of Applied Physics, 1985
- MOCVD growth of (AlxGa1−x)yIn1−yP and double heterostructures for visible light lasersJournal of Crystal Growth, 1984
- The characterisation of Ga1−xInxAs,Al1−xInxAs and InP epitaxial layers prepared by metal organic chemical vapour depositionJournal of Crystal Growth, 1984
- MOCVD Growth and Characterization of (AlxGa1-x)yIn1-yP/GaAsJapanese Journal of Applied Physics, 1984
- Thermodynamic Calculation of the VPE Growth of In1-xGaxAs by the Trichloride MethodJapanese Journal of Applied Physics, 1984
- Thermodynamic aspects of organometallic vapor phase epitaxyJournal of Crystal Growth, 1983
- Composition effects in the growth of Ga(In)AsyP1-y alloys by MBEJournal of Crystal Growth, 1980
- Organometallic VPE Growth of InAs1-xSbxon InAsJapanese Journal of Applied Physics, 1980
- Thermodynamic studies on vapor growth of GaxIn1−xSb in an open tube systemJournal of Crystal Growth, 1975
- Vapor Growth of GaAs1-xPxby the Pyrolysis of Ga(CH3)3, AsH3and PH3Japanese Journal of Applied Physics, 1972