Device application and structure observation for hemispherical-grained Si
- 1 April 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (7) , 3538-3543
- https://doi.org/10.1063/1.350909
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Crystallization of Amorphous Silicon with Clean SurfacesJapanese Journal of Applied Physics, 1991
- New stacked capacitor structure using hemispherical-grain polycrystalline-silicon electrodesApplied Physics Letters, 1991
- The Effect of Low Pressure on the Structure of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1987
- Structure and crystal growth of atmospheric and low-pressure chemical-vapor-deposited silicon filmsJournal of Applied Physics, 1986
- Crystallization of amorphous silicon films during low pressure chemical vapor depositionApplied Physics Letters, 1983
- Structure and Properties of LPCVD Silicon FilmsJournal of the Electrochemical Society, 1980
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978
- Structure of chemically deposited polycrystalline-silicon filmsThin Solid Films, 1973