Schottky barrier photodetectors based on AlGaN
- 9 February 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (6) , 742-744
- https://doi.org/10.1063/1.120862
Abstract
We report solar-blind photovoltaic detectors with cutoff wavelengths as short as 290 nm. Mesa geometry devices of different active areas are fabricated and characterized for spectral responsitivity, speed, and noise performance. The responsivity of the devices near the cutoff wavelength is 0.07 A/W. The detector noise is found to be limited, with a noise equivalent power of over the total response bandwidth of 100 kHz.
Keywords
This publication has 7 references indexed in Scilit:
- Piezoeffect and gate current in AlGaN/GaN high electron mobility transistorsApplied Physics Letters, 1997
- Low noise p-π-n GaN ultraviolet photodetectorsApplied Physics Letters, 1997
- Persistent photoconductivity in n-type GaNApplied Physics Letters, 1997
- Schottky barrier detectors on GaN for visible–blind ultraviolet detectionApplied Physics Letters, 1997
- High responsitivity intrinsic photoconductors based on AlxGa1−xNApplied Physics Letters, 1996
- AlGaN ultraviolet photoconductors grown on sapphireApplied Physics Letters, 1996
- Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wellsApplied Physics Letters, 1990