Study of surface/interface and bulk defect density in a-Si:H by means of photothermal deflection spectroscopy and photoconductivity
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 731-734
- https://doi.org/10.1016/0022-3093(87)90172-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The study of transport and related properties of amorphous silicon by transient experimentsJournal of Non-Crystalline Solids, 1983
- Optical absorption spectra of surface or interface states in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982