Quasi-donor-acceptor pair photoluminescence emission in GaxIn1−xAs/InP
- 15 March 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (6) , 2427-2430
- https://doi.org/10.1063/1.342811
Abstract
The low‐temperature properties of the excitation‐dependent photoluminescence emission, in nominally undoped n‐type GaxIn1−x As (0.44≤x≤0.48) layers grown on InP by molecular‐beam epitaxy, are investigated with changes of temperature and excitation intensity. The excitation‐dependent emission is attributed to the quasi‐donor‐acceptor pair transition in impure compensated crystals. The random impurity potential arising from residual impurities causes a larger energy shift than expected for the usual donor‐acceptor pair transition.This publication has 22 references indexed in Scilit:
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