The effects of lateral injection and base-widening on the high current-low voltage characteristics of transistors
- 31 January 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (1) , 61-68
- https://doi.org/10.1016/0038-1101(70)90009-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Current gain and cutoff frequency falloff at high currentsIEEE Transactions on Electron Devices, 1969
- Characteristics of two-region saturation phenomenaIEEE Transactions on Electron Devices, 1969
- The cutoff frequency falloff in UHF transistors at high currentsProceedings of the IEEE, 1966
- A theory of transistor cutoff frequency (fT) falloff at high current densitiesIRE Transactions on Electron Devices, 1962
- A physical theory of junction transistors in the collector-voltage-saturation regionIRE Transactions on Electron Devices, 1959