High-performance and electrically stable C60 organic field-effect transistors
- 27 August 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 91 (9)
- https://doi.org/10.1063/1.2778472
Abstract
The authors report on high-performance C60 organic field-effect transistors fabricated by physical vapor deposition. Electron mobility ranging from 2.7to5.0cm2∕Vs was achieved when treating the gate dielectric with divinyltetramethyldisiloxane bis(benzocyclobutene) and depositing C60 at room temperature. The transistors combine threshold voltages near zero, low subthreshold slopes (<0.7V/decade), on/off current ratios larger than 106, excellent reproducibility, and good electrical stability under prolonged continuous dc bias stress.Keywords
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