Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors
- 23 January 2006
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 288 (1) , 123-127
- https://doi.org/10.1016/j.jcrysgro.2005.12.061
Abstract
No abstract availableKeywords
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