Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model
- 1 May 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 46 (5) , 611-615
- https://doi.org/10.1109/22.668671
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Silicon MOSFETs, the microwave device technology for the 1990sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Extracting small-signal model parameters of silicon MOSFET transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A physical large signal Si MOSFET model for RF circuit designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A new large-signal model based on pulse measurement techniques for RF power MOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A new empirical nonlinear model for HEMT and MESFET devicesIEEE Transactions on Microwave Theory and Techniques, 1992
- High-frequency performance of submicrometer channel-length silicon MOSFETsIEEE Electron Device Letters, 1991
- A deep-submicrometer microwave/digital CMOS/SOS technologyIEEE Electron Device Letters, 1991