The theory of compensation in lithium drifted semiconductor detectors
- 15 November 1969
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 75 (2) , 297-308
- https://doi.org/10.1016/0029-554x(69)90613-2
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- On the accuracy of acceptor compensation by lithium ion driftNuclear Instruments and Methods, 1967
- On the Mechanism of Lithium Ion Drift in the Electrical Field of a p-n Junction in SiliconPhysica Status Solidi (b), 1966
- A high resolution lithium-drift germanium gamma-ray spectrometerNuclear Instruments and Methods, 1964
- Details of Ion Drift in an n-p JunctionJournal of Applied Physics, 1962
- Gamma-Ray Spectrum obtained with a Lithium-drifted p–i–n Junction in GermaniumNature, 1962
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960
- Theory of the Swept Intrinsic StructureBell System Technical Journal, 1956
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954
- Diffusion of Lithium into Germanium and SiliconPhysical Review B, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952