CMOS-compatible planar silicon waveguide-grating-coupler photodetectors fabricated on silicon-on-insulator (SOI) substrates
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 38 (5) , 477-480
- https://doi.org/10.1109/3.998619
Abstract
We report planar silicon interdigitated p-i-n photodiodes with waveguide-grating couplers fabricated on silicon-on-insulator (SOI) substrates. The devices were fabricated in standard CMOS technology on 200-nm-thick SOI wafers with no additional fabrication steps. A waveguide-grating coupler with a period of 265 nm increased the quantum efficiency by a factor of four compared to a photodiode without a coupler. The dark current was 10 pA at -3-V bias and the bandwidth was 4.1 GHz (RC limited).Keywords
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