Self-assembled monolayer electron beam resist on GaAs
- 1 February 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (5) , 476-478
- https://doi.org/10.1063/1.108938
Abstract
We present results on electron beam exposure of a self-assembled monolayer film as a self-developing positive resist on GaAs. A 1.5 nm thick monolayer of n-octadecanethiol (C18H37SH) deposited on a GaAs (100) substrate showed a electron beam sensitivity of about 100 μC/cm2. The monolayer resist was used as a mask for chemical etching of the GaAs. Patterns in GaAs have been created with widths approximately equal to the exposing electron beam width of 50 nm.Keywords
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