The role of oxygen in irradiated arsenic-doped silicon
- 15 October 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (8) , 476-478
- https://doi.org/10.1063/1.89127
Abstract
Majority carrier traps produced in arsenic‐doped silicon by 1.5‐MeV electron irradiation are characterized by deep level transient spectroscopy. Four traps are observed including a new defect located at Ec−0.30 eV. It is also observed that oxygen plays a vital role in the annealing mechanism of the arsenic‐vacancy pair. This defect, with a level at Ec−0.42 eV, has two annealing stages, the first being much faster than the second. Its first annealing stage cannot be explained by another defect superimposed upon the As‐V pair.Keywords
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