The physics and modeling of heavily doped emitters
- 1 December 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (12) , 1878-1888
- https://doi.org/10.1109/t-ed.1984.21805
Abstract
The physics of minority-carrier injection and internal quantum efficiency of heavily doped emitters is studied through a novel computer simulation. It is shown that in the shallow emitters of modern devices, the transport of carriers through the bulk of the emitter, and the surface recombination rate are the dominant mechanisms controlling the minority-carrier profile. Carrier recombination in the bulk of the emitter only produces a small perturbation of this profile. This observation permits us to develop a simple and accurate analytical model for the saturation current and internal quantum efficiency of shallow emitters.Keywords
This publication has 66 references indexed in Scilit:
- Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cellJournal of Applied Physics, 1982
- Recombination properties of a diffused pn junction determined by spectral response measurementsSolid-State Electronics, 1981
- Surface recombination effects on the performance of n+p step and diffused junction silicon solar cellsSolid-State Electronics, 1981
- Silicon photodiode front region collection efficiency modelsJournal of Applied Physics, 1980
- A new method of analyzing the short-circuit current of silicon solar cellsIEEE Transactions on Electron Devices, 1980
- Spectral response limitation mechanisms of a shallow junction n+-p photodiodeIEEE Transactions on Electron Devices, 1978
- Effects of Impurity Redistribution on the Short‐Circuit Current of n+‐p Silicon Solar CellsJournal of the Electrochemical Society, 1977
- A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devicesIEEE Transactions on Electron Devices, 1977
- Base current of I/sup 2/L transistorsIEEE Journal of Solid-State Circuits, 1977
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976