An atomic force microscopy study of a temperature dependent morphology transition of GaN grown on sapphire by MOCVD
- 1 February 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 197 (1-2) , 37-47
- https://doi.org/10.1016/s0022-0248(98)00954-3
Abstract
No abstract availableKeywords
This publication has 41 references indexed in Scilit:
- On the Prediction of Crystal Morphology. I. The Hartman–Perdok Theory RevisitedActa Crystallographica Section A Foundations of Crystallography, 1998
- GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffractionApplied Physics Letters, 1997
- Observation of coreless dislocations in α-GaNJournal of Crystal Growth, 1997
- The key role of polarity in the growth process of (0001) nitridesMaterials Science and Engineering: B, 1997
- Critical island size for layer-by-layer growthPhysical Review Letters, 1994
- Stable and unstable growth in molecular beam epitaxyPhysical Review Letters, 1994
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- The attachment energy as a habit controlling factorJournal of Crystal Growth, 1980
- On the relations between structure and morphology of crystals. IActa Crystallographica, 1955