Advanced epitaxial Si and GexSi1−x multiprocessing for semiconductor device technologies
- 1 June 1990
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 5 (6) , 1159-1162
- https://doi.org/10.1557/jmr.1990.1159
Abstract
A single-wafer multiprocessing technology has been developed based on the use of lamp heating and remote microwave plasma process energy sources for fabrication of in-situ-doped homoepitaxial Si and heteroepitaxial Si/GexSi1−x multilayer structures via chemical-vapor deposition. Some effective low-temperature (650°–800°C) processes were developed for in-situ pre-epitaxial growth surface cleaning. These chemical cleaning processes employ GeH4 + H2 or GeH4 + H2 + (HF or HCl) gas mixtures with very small GeH4-to-H2 gas flow rate ratios. Multilayer heteroepitaxial structures with controlled doping and Ge fractions consisting of strained Ge4Si1−x layers were fabricated and characterized.Keywords
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