Low-Temperature Surface Cleaning of Si and Successive Plasma-Assisted Epitaxial Growth of GaAs
- 1 October 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (10A) , L1576
- https://doi.org/10.1143/jjap.26.l1576
Abstract
Removal of native oxide on Si at a temperature as low as 500°C and the successive epitaxial growth of GaAs have been achieved in hydrogen plasma. Simultaneous supply of Ga or As during hydrogen plasma treatment has been found to be more effective in getting reproducible and successful epitaxial growth than simple hydrogen-plasma cleaning.Keywords
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